| タイトル | Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses |
| 著者（英） | Fathauer, R. W.; Grunthaner, P. J.; Schowengerdt, F. D.; Lin, T. L. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech.|Colorado School of Mines |
| 発行日 | 1989-05-01 |
| 言語 | eng |
| 内容記述 | The Si/CoSi2/Si heterostructures prepared by codeposition and solid-phase epitaxy on Si(111) substrates were characterized using Auger plasmon data as a measure of Si overlayer thickness. The method of calibration is described, and the results of two studies, including a study of islanding in Si/CoSi2/Si and a study of diffusion in CoSi2/Si are presented, illustrating the utility of the Auger plasmon loss technique. It is shown that, most likely, the diffusion proceeds through residual defects in the CoSi2. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 89A37836 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/363602 |
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