| タイトル | Shubnikov-de Haas measurements of the 2-D electron gas in pseudomorphic In(0.1)Ga(0.9)As grown on GaAs |
| 著者（英） | Alterovitz, S. A.; Haugland, E. J.; Segall, B.; Szydlic, P. P.; Henderson, T. S. |
| 著者所属（英） | Illinois Univ.|Case Western Reserve Univ.|State Univ. of New York|NASA Lewis Research Center |
| 発行日 | 1988-01-01 |
| 言語 | eng |
| 内容記述 | Shubnikov-de Hass (SdH) measurements performed on a 200 A layer of pseudomorphic In(0.10)Ga(0.90)As grown by MBE on undoped GaAs with an overlayer of Al(0.15)Ga(0.85)As are presented. These measurements were performed in magnetic fields up to 1.4 tesla at T in the range of 1.4-10 K. It was found that only one subband was populated with a density of 5.8 x 10 to the 11/cm-squared and an effective mass at the Fermi level m(asterisk) = (0.060 + or - 0.001)m(0). |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 89A29299 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/364843 |
