| タイトル | Asymmetrical SRAM Cells For Radiation Tests |
| 著者（英） | Buehler, Martin G. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1989-06-01 |
| 言語 | eng |
| 内容記述 | Features of circuits altered to increase or decrease sensitivity to radiation. State-space analysis used to analyze single-event-upset behavior of memory cell. When voltage on node a is set at one of indicated initial values Vao and then released, voltages on nodes a and b then follow indicated trajectory to final logic "one" or logic "zero" state. Ability to do this important for design of radiation-detecting integrated circuits (deliberately made more sensitive to ionizing radiation) and "radiation-hardened" integrated circuits - those intended to be relatively invulnerable to intense radiation. |
| NASA分類 | ELECTRONIC COMPONENTS AND CIRCUITS |
| レポートNO | 89B10272
NPO-16890 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/368190 |
