| タイトル | Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers |
| 著者（英） | Derry, P. L.; Morkoc, H.; Lau, K. Y.; Yariv, A.; Chen, H. Z. |
| 著者所属（英） | Ortel Corp.|California Inst. of Tech. |
| 発行日 | 1988-04-01 |
| 言語 | eng |
| 内容記述 | Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control. |
| NASA分類 | LASERS AND MASERS |
| レポートNO | 88A35860 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/370992 |
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