| タイトル | HgCdTe versus HgZnTe - Electronic properties and vacancy formation energies |
| 著者（英） | Chen, A. B.; Sher, A.; Berding, M. A. |
| 著者所属（英） | SRI International Corp.|Auburn Univ. |
| 発行日 | 1987-01-01 |
| 言語 | eng |
| 内容記述 | The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. The electron mobility was calculated in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg(0.7)Cd(03)Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 88A35714 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/371011 |
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