| タイトル | Antireflection/Passivation Step For Silicon Cell |
| 著者（英） | Crotty, Gerald T.; Daud, Taher; Kachare, Akaram H. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1988-10-01 |
| 言語 | eng |
| 内容記述 | New process excludes usual silicon oxide passivation. Changes in principal electrical parameters during two kinds of processing suggest antireflection treatment almost as effective as oxide treatment in passivating cells. Does so without disadvantages of SiOx passivation. |
| NASA分類 | FABRICATION TECHNOLOGY |
| レポートNO | 88B10505
NPO-16810 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/375005 |
