| タイトル | Studies Of Single-Event-Upset Models |
| 著者（英） | Soli, G. A.; Zoutendyk, J. A.; Smith, L. S. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1988-02-01 |
| 言語 | eng |
| 内容記述 | Report presents latest in series of investigations of "soft" bit errors known as single-event upsets (SEU). In this investigation, SEU response of low-power, Schottky-diode-clamped, transistor/transistor-logic (TTL) static random-access memory (RAM) observed during irradiation by Br and O ions in ranges of 100 to 240 and 20 to 100 MeV, respectively. Experimental data complete verification of computer model used to simulate SEU in this circuit. |
| NASA分類 | ELECTRONIC SYSTEMS |
| レポートNO | 88B10085
NPO-16735 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/375425 |
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