| タイトル | Intrusions in the active layer of channeled-substrate-planar laser diodes |
| 著者（英） | Hughes, J. J.; Slavin, S. E.; Hawrylo, F. Z. |
| 著者所属（英） | RCA Labs. |
| 発行日 | 1987-08-01 |
| 言語 | eng |
| 内容記述 | Channeled-substrate-planar laser diodes from various wafers were observed to develop a node or dark spot in their near-field patterns after failure during lifetesting. 'Node' devices from each wafer were angle-lapped and stained in an attempt to uncover a physical mechanism for this common failure symptom. Optical microscopic examination of the beveled cross sections revealed that an intrusion, in the form of a spike at the tip of the zinc diffusion front, had penetrated into the active layer of these diodes. The node observed in the near-field pattern appears to be in a position correspondig to the location of the spike in the active region. In addition, cathodoluminescence measurements on other 'node' diodes revealed a dark line region approximately 2-micron-wide running parallel to and in the middle of the 5-micron contact stripe. It is believed that this dark line region is representative of an area of nonradiative recombination which occurs in the portion of the active layer containing the intrusion. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 87A49392 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/376215 |
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