| タイトル | Determination of a natural valence-band offset - The case of HgTe and CdTe |
| 著者（英） | Spicer, W. E.; Shih, C. K. |
| 著者所属（英） | Stanford Univ. |
| 発行日 | 1987-06-15 |
| 言語 | eng |
| 内容記述 | A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 87A44350 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/376996 |
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