| タイトル | Thermal viscoplastic buckling during the growth of silicon ribbon |
| 著者（英） | Tsai, C. T.; Dillon, O. W., Jr. |
| 著者所属（英） | Kentucky Univ. |
| 発行日 | 1987-01-01 |
| 言語 | eng |
| 内容記述 | This paper is an analysis of the conditions to be satisfied in order to avoid buckling during the growth of a silicon ribbon that is being slowly pulled from the melt. A viscoplastic constitutive equation with a dislocation density effect is used to model the material behavior. The critical thicknesses and the corresponding deflection shapes are calculated by the finite element method for the cantilever boundary conditions. The value of the parameter which controls the speed of the lateral deflection is computed by using Galerkin's method. It is demonstrated that, due to the effect of viscoplasticity, some deflection shapes increase in magnitude with time and other shapes damp out. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 87A41174 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/377489 |
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