| タイトル | 30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology |
| 著者（英） | Sokolov, V.; Chao, C.; Contolatis, A.; Bauhahn, P. |
| 著者所属（英） | Honeywell, Inc. |
| 発行日 | 1986-06-01 |
| 言語 | eng |
| 内容記述 | An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 87A34525 |
| 権利 | Copyright |
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