| タイトル | Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K |
| 著者（英） | Weinreb, Sander; Palmateer, Susan C.; Smith, Phillip M.; Chao, Pane-Chane; Pospieszalski, Marian W. |
| 著者所属（英） | General Electric Co.|National Radio Astronomy Observatory |
| 発行日 | 1986-02-01 |
| 言語 | eng |
| 内容記述 | The four noise parameters of cryogenically cooled HEMTs have been investigated. Two different HEMT structures, with and without a spacer layer, were tested. The noise parameters of both structures were similar at room temperature, while they were dramatically different at cryogenic temperatures. The minimum noise temperatures measured at 8.4 GHz were 75 + or 5 K at room temperature and 8.5 + or - 1.5 K at the temperature of 12.5 K. The cryogenic performance is the best ever observed for field-effect transistors. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 87A23904 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/379908 |
