| タイトル | Discovery of heavy-ion induced latchup in CMOS/epi devices |
| 著者（英） | Nichols, D. K.; Kolasinsky, W. A.; Price, W. E.; Duffey, J.; Shoga, M. A. |
| 著者所属（英） | Hughes Aircraft Co.|Aerospace Corp.|Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1986-12-01 |
| 言語 | eng |
| 内容記述 | The observance of latchup in CMOS/epi devices upon exposure to krypton ions is reported. The effect of epi layer thickness on latchup susceptibility is discussed. An approach to eliminating this effect is indicated. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 87A22029 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/380380 |
