| タイトル | Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition |
| 著者（英） | Bailey, S. G.; Williams, W. D.; Leon, R. P.; Mazaris, G. A. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1986-10-13 |
| 言語 | eng |
| 内容記述 | A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 87A21237 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/380462 |
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