| タイトル | Measurement and analysis of solar cell current-voltage characteristics |
| 著者（英） | Doyle, Dan H.; Miller, Wesley A.; Addis, F. William; Olsen, Larry C. |
| 著者所属（英） | Washington Univ. |
| 発行日 | 1985-01-01 |
| 言語 | eng |
| 内容記述 | Approaches to measurement and analysis of solar cell current-voltage characteristics under dark and illuminated conditions are discussed. Measurements are taken with a computer based data acquisition system for temperatures in the range of -100 to +100 C. In the fitting procedure, the various I(oi) and C(i) as well as R(S) and R(SH) are determined. Application to current-voltage analyses of high efficiency silicon cells and Boeing CdS/CuInSe2 are discussed. In silicon MINP cells, it is found that at low voltages a tunneling mechanism is dominant, while at larger voltages the I-V characteristics are usually dominated by emitter recombination. In the case of Boeing cells, a current transport model based on a tunneling mechanism and interface recombination acting in series has been developed as a result of I-V analyses. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 87A19912 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/380680 |
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