| タイトル | A 25.5 percent AM0 gallium arsenide grating solar cell |
| 著者（英） | Weizer, V. G.; Godlewski, M. P. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1985-01-01 |
| 言語 | eng |
| 内容記述 | Recent calculations have shown that significant open circuit voltage gains are possible with a dot grating junction geometry. The feasibility of applying the dot geometry to the GaAs cell was investigated. This geometry is shown to result in voltage approach 1.120 V and efficiencies well over 25 percent (AM0) if good collection efficiency can be maintained. The latter is shown to be possible if one chooses the proper base resistivity and cell thickness. The above advances in efficiency are shown to be possible in the P-base cell with only minor improvements in existing technology. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 87A19840 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/380697 |
