| タイトル | Reflectivity of silicon carbide in the extreme ultraviolet |
| 著者（英） | Sanger, Greg; Mrowka, Stanley; Bowyer, Stuart; Choyke, W. J.; Jelinsky, Patrick |
| 著者所属（英） | Westinghouse Research Labs.|California Univ.|United Technologies Research Center |
| 発行日 | 1986-01-01 |
| 言語 | eng |
| 内容記述 | Reflectivity and scattering measurements on samples of SiC manufactured by a variety of processes. Measurements were made from near-normal to grazing incidence at wavelengths in the range of 114 to 1216 A. CVD SiC displays the highest reflectivity at EUV wavelengths and normal incidence. At grazing incidence, Si-rich samples show reflectivity cutoff identical to polycrystalline Si. From the limited data available for single-crystal material, it is concluded that CVD material has comparable performance. |
| NASA分類 | OPTICS |
| レポートNO | 87A19742 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/380716 |
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