| タイトル | Inverted thermal conversion - GaAs, a new alternative material for integrated circuits |
| 著者（英） | Skowronski, M.; Ko, K. Y.; Kang, C. H.; Lagowski, J.; Gatos, H. C. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1986-10-06 |
| 言語 | eng |
| 内容記述 | A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 87A19105 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/380841 |
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