| タイトル | Dislocation dynamics during the growth of silicon ribbon |
| 著者（英） | De Angelis, R. J.; Tsai, C. T.; Dillon, O. W., Jr. |
| 著者所属（英） | Kentucky Univ. |
| 発行日 | 1986-09-01 |
| 言語 | eng |
| 内容記述 | The thermal viscoplastic stresses and the dislocation densities in silicon ribbon are computed for an axially changing thermal profile by using an iterative finite difference method. A material constitutive equation (Haasen-Sumino model) which involves an internal variable (mobile dislocation density) is used. The results are interpreted as showing that there is a maximum width of silicon ribbon that can be grown when viscoplasticity and dislocations are considered. This maximum width limitation does not exist if the material behavior is elastic. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 87A12299 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/381746 |
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