| タイトル | GaAs Semi-Insulating Layer for a GaAs Device |
| 著者（英） | Sherrill, G.; Mattauch, R. J. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1986-09-01 |
| 言語 | eng |
| 内容記述 | Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated. |
| NASA分類 | ELECTRONIC COMPONENTS AND CIRCUITS |
| レポートNO | 86B10411
NPO-16394 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/388764 |
