| タイトル | Crack Growth in Single-Crystal Silicon |
| 著者（英） | Chen, C. P.; Leipold, M. H. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1986-05-01 |
| 言語 | eng |
| 内容記述 | Report describes experiments on crack growth in single-crystal silicon at room temperature in air. Crack growth in (111) cleavage plane of wafers, 50 by 100 by 0.76 mm in dimension, cut from Czochralski singlecrystal silicon studied by double-torsion load-relaxation method and by acoustic-emission measurements. Scanning electron microscopy and X-ray topography also employed. Results aid in design and fabrication of silicon photovoltaic and microelectronic devices. |
| NASA分類 | MATERIALS |
| レポートNO | 86B10232
NPO-16757 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/388943 |
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