| タイトル | Fabrication of an X-Ray Imaging Detector |
| 著者（英） | Burgess, A. S.; Alcorn, G. E. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 1986-05-01 |
| 言語 | eng |
| 内容記述 | X-ray detector array yields mosaic image of object emitting 1- to 30-keV range fabricated from n-doped silicon wafer. In proposed fabrication technique, thin walls of diffused n+ dopant divide wafer into pixels of rectangular cross section, each containing central electrode of thermally migrated p-type metal. This pnn+ arrangement reduces leakage current by preventing transistor action caused by pnp structure of earlier version. |
| NASA分類 | ELECTRONIC COMPONENTS AND CIRCUITS |
| レポートNO | 86B10197
GSC-12956 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/388978 |
