| タイトル | Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures |
| 著者（英） | Madhukar, A.; Lee, T. C.; Lewis, B. F.; Yen, M. Y.; Fernandez, R.; Grunthaner, F. J. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech.|University of Southern California |
| 発行日 | 1985-05-15 |
| 言語 | eng |
| 内容記述 | GaAs/InAs(100) multiple interface structures involving 7.4 percent lattice mismatch have been fabricated via molecular beam epitaxy and examined via transmission electron microscopy. It is found that high-quality, dislocation-free interfaces involving such high lattice mismatch can indeed be experimentally realized for very thin layers provided proper care is given to achieve a balance between the growth kinetics and the thermodynamics leading to the equilibrium ground state of the strained layer. The compressive strain is homogeneously accommodated and a tetragonal distortion is induced in the InAs layer with a perpendicular lattice constant in close agreement with that expected on the basis of the continuum theory and elastic constants of bulk InAs. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 85A36194 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/391180 |
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