| タイトル | Monolithic lead salt-silicon focal plane development |
| 著者（英） | Jhabvala, M. D.; Maldari, F. S.; Barrett, J. R. |
| 著者所属（英） | NASA Goddard Space Flight Center; Itek Corp. |
| 発行日 | 1983-01-01 |
| 言語 | eng |
| 内容記述 | This paper is a summary of work done in the development of monolithic lead salt-silicon infrared focal plane technology. The photoconductive detector materials, PbS and PbSe are chemically deposited onto premetallized silicon MOSFET integrated circuit wafers. A variety of structures based on an implanted PMOS process were fabricated and evaluated. Operational results of an eight-element PbS array multiplexed on-chip are presented along with radiometric measurements on other integrated PbS-silicon MOSFET structures. PbS imagery is shown using one element of a 20-element array integrated on-chip. |
| NASA分類 | INSTRUMENTATION AND PHOTOGRAPHY |
| レポートNO | 85A22620 |
| 権利 | Copyright |
