| タイトル | The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells |
| 著者（英） | Brandhorst, H. W., Jr.; Mehta, S.; Swartz, C. K.; Weinberg, I. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1984-11-01 |
| 言語 | eng |
| 内容記述 | Boron-doped silicon solar cells were counterdoped with lithium and the resultant n+p cells irradiated by 1 MeV electrons. Lithium counterdoped cells exhibit significantly increased radiation resistance with considerable annealing occurring at 100? C; DLTS studies indicate that the annealing behavior is controlled by a single defect at Ev + 0.43 eV. It is concluded that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies. It is speculated that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance. |
| NASA分類 | SPACECRAFT PROPULSION AND POWER |
| レポートNO | 85N22586 |
| 権利 | No Copyright, Distribution within the U.S. granted by agreement |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/395103 |
