| タイトル | The high voltage silicon cell: A comparative analysis |
| 著者（英） | Hart, R. E.; Swartz, C. K.; Godlewski, M. P.; Weizer, V. G. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1984-11-01 |
| 言語 | eng |
| 内容記述 | An experimental technique capable of resolving the dark saturation current into its base and emitter components is used in an analysis in which the voltage limiting mechanisms for high voltage, low resistivity silicon solar cells were determined. Hi-low emitter cells, multistep diffused cells, ion-implanted emitter cell, MINMIS and MINP cells were studied. The results are at variance with prior expectations: the MINP and the MINMIS voltage improvements are due, to a considerable extent, to an optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate the devices. |
| NASA分類 | SPACECRAFT PROPULSION AND POWER |
| レポートNO | 85N22569 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/395105 |
|
