タイトル | MBE growth for high-efficiency silicon solar cells |
著者(英) | Allen, F. |
著者所属(英) | California Univ. |
発行日 | 1984-03-01 |
言語 | eng |
内容記述 | Extreme dopant control was utilized with molecular beam epitaxy (MBE) to grow silicon solar cells of high efficiency. Computerized simulation of a cascade silicon cell with two junctions in series as a means of getting large dc voltage and high efficiency was performed. |
NASA分類 | ENERGY PRODUCTION AND CONVERSION |
レポートNO | 85N15265 |
権利 | No Copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/395353 |