| タイトル | NASA seeking high-power 60-GHz IMPATT diodes |
| 著者（英） | Haugland, E. J. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1984-08-01 |
| 言語 | eng |
| 内容記述 | Recent progress in the development of high-power 60 GHz GaAs IMPATT diodes for communication links with high-data-rate satellites is discussed. One of the advantages of GaAs over Si as the material for the diodes are that GaAs is likely to have a higher output and efficiency than Si despite recent advances in Si technology. It is therefore in GaAs technology that research is currently concentrating. Some of the design strategies of the various companies working on the technology are described, including a pill process, MOCVD growth, and the use of diethy zinc as a dopant. Reliability testing of the diodes will be performed by NASA. Some of the alternatives to solid state amplifiers are discussed, including optical and traveling wave tube technology (TWT). |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 84A44912 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/396674 |
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