| タイトル | Increased radiation resistance in lithium-counterdoped silicon solar cells |
| 著者（英） | Weinberg, I.; Mehta, S.; Swartz, C. K. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1984-06-01 |
| 言語 | eng |
| 内容記述 | Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 84A34846 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/398023 |
