| タイトル | X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2 |
| 著者（英） | Naiman, M. L.; Grunthaner, F. J.; Hecht, M. H.; Vasquez, R. P. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech.|Massachusetts Inst. of Tech. |
| 発行日 | 1984-05-15 |
| 言語 | eng |
| 内容記述 | X-ray photoelectron spectroscopy has been used to study the composition of 100-A thermally grown SiO2 films that have been thermally nitrided in ammonia. The SiO(x)N(y)/Si interface was studied both by chemical depth profiling of the oxynitride and by removal of the Si substrate with XeF2. It is found that N is distributed throughout the film, but with the concentration higher at the surface and in a region centered 25 A from the film/substrate interface. The interface region itself is found to be oxygen-rich relative to the rest of the film. Possible models which can explain these results are discussed. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 84A34032 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/398117 |
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