| タイトル | Lead sulfide - Silicon MOSFET infrared focal plane development |
| 著者（英） | Jhabvala, M. D.; Barrett, J. R. |
| 著者所属（英） | Itek Corp.|NASA Goddard Space Flight Center |
| 発行日 | 1983-01-01 |
| 言語 | eng |
| 内容記述 | A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown. |
| NASA分類 | INSTRUMENTATION AND PHOTOGRAPHY |
| レポートNO | 84A28467 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/398801 |
