| タイトル | High-efficiency V-band GaAs IMPATT diodes |
| 著者（英） | Benko, E.; Erickson, L. P.; Trinh, T.; Ma, Y. E.; Mattord, T. J. |
| 著者所属（英） | Perkin-Elmer Corp.|Hughes Aircraft Co. |
| 発行日 | 1984-03-01 |
| 言語 | eng |
| 内容記述 | Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 84A27976 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/398851 |
