| タイトル | New cryogenic P-channel metal-oxide-semiconductor field effect transistor (MOSFET) with optimized doping yielding performance superior to the G-118, W-164, and 3N165 at 77 K, 4 K, and 1.8 K |
| 著者（英） | Arentz, R. F.; Hadek, V.; Hoxie, V. L. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech.|Solitron Corp.|Ball Aerospace Systems Div. |
| 発行日 | 1983-01-01 |
| 言語 | eng |
| 内容記述 | |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 84A27317 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/398942 |
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