| タイトル | Optimal design of high-efficiency tandem cells |
| 著者（英） | Palm, B. J.; Tsaur, B.-Y.; Fan, J. C. C. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1982-01-01 |
| 言語 | eng |
| 内容記述 | Computer analysis indicates that a substantial increase in solar cell conversion efficiencies can be achieved by using two-cell, multi-bandgap tandem structures instead of single-junction cells. Practical AM1 efficiencies of about 30 percent at one sun and over 30 percent at multiple suns are to be expected. The further increases in efficiency calculated for a three-cell tandem structure are much smaller and may not justify the added complexity. For inexpensive two-cell tandem modules, Si is preferred for the bottom cell, and the top-cell material should have a bandgap of 1.75 to 1.80 eV. The GaAs-AlAs and GaAs-GaP systems are very attractive candidates for the top cell. Significant advances have been achieved in growing GaAs on Ge-coated Si substrates (for the two-terminal, two-cell structure) and in growing free-standing ultrathin GaAs layers (for the two-terminal or four-terminal structures). These advances should be transferable to the GaAs-AlAs and GaAs-GaP systems. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 84A23050 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/399488 |
