| タイトル | A Ka-band GaAs monolithic phase shifter |
| 著者（英） | Contolatis, A.; Chao, C.; Geddes, J. J.; Sokolov, V.; Bauhahn, P. E. |
| 著者所属（英） | Honeywell Corporate Research Center |
| 発行日 | 1983-12-01 |
| 言語 | eng |
| 内容記述 | The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 84A18371 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/400021 |
