| タイトル | Phase-locked semiconductor laser array with separate contacts |
| 著者（英） | Shreter, U.; Kapon, E.; Katz, J.; Lindsey, C.; Margalit, S.; Yariv, A. |
| 著者所属（英） | California Inst. of Tech.|Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1983-09-15 |
| 言語 | eng |
| 内容記述 | A new monolithic phase-locked semiconductor laser array has been fabricated. Employing two-level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns. Threshold currents are approximately 60 mA for each 5-micron-wide laser in the array. Phase locking has been observed via the narrowing of the far-field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel. |
| NASA分類 | LASERS AND MASERS |
| レポートNO | 83A46721 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/402397 |
|
