タイトル | Enhanced adhesion from high energy ion irradiation |
著者(英) | Mendenhall, M. H.; Werner, B. T.; Qui, Y.; Tombrello, T. A.; Vreeland, T., Jr. |
著者所属(英) | California Inst. of Tech. |
発行日 | 1983-01-01 |
言語 | eng |
内容記述 | It has been found that the adhesion of thin metal films on insulators, semiconductors, and metals could be improved by subjecting the material to a high-energy ion bombardment. Griffith et al. (1982) have first suggested a use of this technique with insulators. The present investigation has the objective to determine the mechanism for the adhesion enhancement. A description is presented of a preliminary transmission electron microscopy (TEM) study of thinned bonded samples of silver on silicon using electron diffraction. It is found that irradiation of a variety of thin film-substrate combinations by heavy ion beams will provide a remarkable improvement in the adherence of the film. The evidence for the mechanism involved in the enhancement of adhesion is discussed. |
NASA分類 | SOLID-STATE PHYSICS |
レポートNO | 83A46703 |
権利 | Copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/402411 |
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