| タイトル | On the optical evaluation of the EL2 deep level concentration in semi-insulating GaAs |
| 著者（英） | Lagowski, J.; Gatos, H. C.; Walukiewicz, W. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1983-07-15 |
| 言語 | eng |
| 内容記述 | A practical procedure for the evaluation of the Fermi energy in semi-insulating (SI)GaAs from electrical measurements is presented. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near-infrared absorption measurements, to SIGaAs. Employing this procedure, it is shown that the EL2 concentration in Czochralski-grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p-type crystals) rather than abruptly as previously proposed. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 83A40062 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/403217 |
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