| タイトル | Nitridation of Si(111) by nitrogen atoms. II |
| 著者（英） | Schrott, A. G.; Fain, S. C., Jr. |
| 著者所属（英） | Washington Univ. |
| 発行日 | 1982-01-01 |
| 言語 | eng |
| 内容記述 | The reaction between Si(111) and nitrogen atoms has been investigated by LEED, Auger, and electron energy loss (ELS) techniques. The early stage of the reaction at 850-1050 C involves the formation of a chemically reacted monolayer which grows in islands. The sticking coefficient for the submonolayer is estimated to be of the order of unity. Two electronically different surface structures can be formed during these stages, yielding the '8 x 8' and the quadruplet LEED patterns; the quadruplet unit cell is the one with the highest nitrogen density. A pure quadruplet structure is obtained from samples with a carbon contamination of the Si monolayer of about 5 pct. During the multilayer stages, the influence of the substrate is not as important, and the reactions at 850 C and above produce quadruplet-like local structures. |
| NASA分類 | INORGANIC AND PHYSICAL CHEMISTRY |
| レポートNO | 83A36723 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/403728 |
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