JAXA Repository / AIREX 未来へ続く、宙(そら)への英知

このアイテムに関連するファイルはありません。

タイトルSputtering of silicon and its compounds in the electronic stopping region
著者(英)Tombrello, T. A.; Qiu, Y.; Griffith, J. E.; Meng, W. J.
著者所属(英)California Inst. of Tech.|Bell Telephone Labs., Inc.
発行日1983-01-01
言語eng
内容記述Silicon, silicon dioxide, and silicon nitride have been sputtered with chlorine ions at 5 MeV and 20 MeV. While the yield from the silicon target was unmeasurably low, the insulating compounds exhibited the enhanced yields observed in other insulating targets. The yield follows the electronic stopping power and seems to be independent of the target's thermal properties. Some of the data suggest that the enhanced sputtering mechanism may be active in extremely thin films (not less than 3 monolayers).
NASA分類SOLID-STATE PHYSICS
レポートNO83A36713
権利Copyright
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/403738


このリポジトリに保管されているアイテムは、他に指定されている場合を除き、著作権により保護されています。