| タイトル | Sputtering of silicon and its compounds in the electronic stopping region |
| 著者（英） | Tombrello, T. A.; Qiu, Y.; Griffith, J. E.; Meng, W. J. |
| 著者所属（英） | California Inst. of Tech.|Bell Telephone Labs., Inc. |
| 発行日 | 1983-01-01 |
| 言語 | eng |
| 内容記述 | Silicon, silicon dioxide, and silicon nitride have been sputtered with chlorine ions at 5 MeV and 20 MeV. While the yield from the silicon target was unmeasurably low, the insulating compounds exhibited the enhanced yields observed in other insulating targets. The yield follows the electronic stopping power and seems to be independent of the target's thermal properties. Some of the data suggest that the enhanced sputtering mechanism may be active in extremely thin films (not less than 3 monolayers). |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 83A36713 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/403738 |
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