| タイトル | Critical technology limits to silicon material and sheet production |
| 著者（英） | Leipold, M. H. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1982-01-01 |
| 言語 | eng |
| 内容記述 | Earlier studies have indicated that expenditures related to the preparation of high-purity silicon and its conversion to silicon sheet represent from 40 to 52 percent of the cost of the entire panel. The present investigation is concerned with the elements which were selected for study in connection with the Flat-Plate Solar Array (FSA) Project. The first of two technologies which are being developed within the FSA Project involves the conversion of metallurgical-grade silicon through a silane purification process to silicon particles. The second is concerned with the conversion of trichlorosilane to dichlorosilane, and the subsequent production of silicon using modified rod reactors of the Siemens type. With respect to silicon sheet preparation, efforts have been focused both on the preparation of ingots, followed by wafering, and the direct crystallization of molten silicon into a ribbon or film. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 83A32323 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/404274 |
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