| タイトル | Production of large-area single-crystal wafers of cubic SiC for semiconductor devices |
| 著者（英） | Powell, J. A.; Nishino, S.; Will, H. A. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1983-03-01 |
| 言語 | eng |
| 内容記述 | A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 83A22767 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/405413 |
