| タイトル | The damage equivalence of electrons, protons, and gamma rays in MOS devices |
| 著者（英） | August, L. S.; Jordan, T. M.; Van Gunten, O.; Stassinopoulos, E. G.; Brucker, G. J. |
| 著者所属（英） | Experimental and Mathematical Physics Consultants|Naval Research Lab.|NASA Goddard Space Flight Center|RCA Labs.|National Security Agency |
| 発行日 | 1982-12-01 |
| 言語 | eng |
| 内容記述 | The results of laboratory tests to determine the radiation damage effects induced on MOS devices from Co-60, electron, and proton radiation are reported. The tests are performed to establish the relationship between the Co-60 gamma rays and the level of damage to the MOS devices in regards to different damages which can be expected with the electron and particle bombardments experienced in space applications. CMOS devices were exposed to the Co-60 gamma rays, 1 MeV electrons, and 1 MeV protons while operating at 3, 10, and 15 V. The test data indicated that the Co-60 source was reliable for an initial evaluation of the electron damages up to 2 MeV charge. A correction factor was devised for transferring the Co-60 measurements to proton damages, independent of bias and transistor types, for any orbit or environment. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 83A17533 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/406015 |
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