タイトル | Eutectic(alpha-Fe2Si5, epsilon-FeSi)に現れる3層構造 |
その他のタイトル | A three-layer structure formed in Eutectic (alpha-F[lc]e2S[lc]i5 and epsilon-F[lc]eS[lc]i) |
著者(日) | 瀧川 靖雄; 戸出 真由美; 大向 雅人; 野口 悟; 黒澤 宏 |
著者(英) | Takigawa, Yasuo; Tode, Mayumi; Omukai, Masato; Noguchi, Satoru; Kurosawa, Ko |
著者所属(日) | 大阪電気通信大学 大学院工学研究科; 大阪電気通信大学 大学院工学研究科; 明石工業高等専門学校 電子工学科; 大阪府立大学 大学院工学研究科; 宮崎大学 大学院工学研究科 |
著者所属(英) | Osaka Electro-Communication University Graduate School of Engineering; Osaka Electro-Communication University Graduate School of Engineering; Akashi National College of Technology Department of Electrical and Computer Engineering; Osaka Prefecture University Graduate School of Engineering; Miyazaki University Graduate School of Engineering |
発行日 | 2002-05-31 |
刊行物名 | 大阪電気通信大学研究論集:自然科学編 Memoirs of Osaka Electro-Communication University: Natural Science |
号 | 37 |
開始ページ | 45 |
終了ページ | 49 |
刊行年月日 | 2002-05-31 |
言語 | jpn |
抄録 | Stoichiometrically mixed (FeSi2) Fe and Si powders were melted in a tri-arc furnace in an argon atmosphere and were allowed to cool naturally to room temperature and a eutectic crystal of epsilon-phase embedded in alpha-phase of iron silicide was obtained. Three kinds of layers were determined: the grain size of epsilon-phase was more than 100 micrometers, about 50 micrometers and less than 1 micrometer. Only the first layer did not contain alpha-phase. The interfaces between the layers were so definite that the grain size was changed abruptly between the layers. When the crystal was annealed in vacuum at 1,150 K for 70 h, the last two layers were transformed to beta-FeSi2 but the bottom layer containing only epsilon-phase was not changed by the thermal treatment. |
キーワード | eutectic crystal; iron silicide; thermoelectric semiconductor; layered structure; arc furnace; electroluminescence; semiconductor laser; 共晶; 鉄シリサイド; 熱電半導体; 層構造; アーク炉; エレクトロルミネセンス; 半導体レーザ |
資料種別 | Technical Report |
ISSN | 0386-4987 |
SHI-NO | AA0033014002 |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/40642 |