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タイトルEutectic(alpha-Fe2Si5, epsilon-FeSi)に現れる3層構造
その他のタイトルA three-layer structure formed in Eutectic (alpha-F[lc]e2S[lc]i5 and epsilon-F[lc]eS[lc]i)
著者(日)瀧川 靖雄; 戸出 真由美; 大向 雅人; 野口 悟; 黒澤 宏
著者(英)Takigawa, Yasuo; Tode, Mayumi; Omukai, Masato; Noguchi, Satoru; Kurosawa, Ko
著者所属(日)大阪電気通信大学 大学院工学研究科; 大阪電気通信大学 大学院工学研究科; 明石工業高等専門学校 電子工学科; 大阪府立大学 大学院工学研究科; 宮崎大学 大学院工学研究科
著者所属(英)Osaka Electro-Communication University Graduate School of Engineering; Osaka Electro-Communication University Graduate School of Engineering; Akashi National College of Technology Department of Electrical and Computer Engineering; Osaka Prefecture University Graduate School of Engineering; Miyazaki University Graduate School of Engineering
発行日2002-05-31
刊行物名大阪電気通信大学研究論集:自然科学編
Memoirs of Osaka Electro-Communication University: Natural Science
37
開始ページ45
終了ページ49
刊行年月日2002-05-31
言語jpn
抄録Stoichiometrically mixed (FeSi2) Fe and Si powders were melted in a tri-arc furnace in an argon atmosphere and were allowed to cool naturally to room temperature and a eutectic crystal of epsilon-phase embedded in alpha-phase of iron silicide was obtained. Three kinds of layers were determined: the grain size of epsilon-phase was more than 100 micrometers, about 50 micrometers and less than 1 micrometer. Only the first layer did not contain alpha-phase. The interfaces between the layers were so definite that the grain size was changed abruptly between the layers. When the crystal was annealed in vacuum at 1,150 K for 70 h, the last two layers were transformed to beta-FeSi2 but the bottom layer containing only epsilon-phase was not changed by the thermal treatment.
キーワードeutectic crystal; iron silicide; thermoelectric semiconductor; layered structure; arc furnace; electroluminescence; semiconductor laser; 共晶; 鉄シリサイド; 熱電半導体; 層構造; アーク炉; エレクトロルミネセンス; 半導体レーザ
資料種別Technical Report
ISSN0386-4987
SHI-NOAA0033014002
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/40642


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