| タイトル | A radiation hardened 256 x 4 bulk CMOS RAM |
| 著者（英） | Donnelly, R.; Smeltzer, R. K.; Yeh, J.; Napoli, L. S. |
| 著者所属（英） | RCA Labs.|RCA Solid State Div. |
| 発行日 | 1982-09-01 |
| 言語 | eng |
| 内容記述 | A radiation hardened version of the C2L process has been developed that utilizes all-low-temperature processes subsequent to channel oxidation. This process has been used on 1K RAMS. The RAMs functioned reliably at a dose of 200,000 rads (Si) and failed at a dose of 500,000 rads (Si). The 1K RAM is capable of operating from 7.5 to 12 volts and has an access time from address change of 160 nsec at 10 volts |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 83A13996 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/406564 |
