| タイトル | Oscillating-Crucible Technique for Silicon Growth |
| 著者（英） | Smetana, P.; Dumas, K. A.; Daud, T.; Schwuttke, G. H.; Kim, K. M. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1984-04-01 |
| 言語 | eng |
| 内容記述 | Technique yields better mixing of impurities and superior qualiity crystals. Accellerated motion stirs melt which reduces temperature gradients and decreases boundary layer for diffusion of impurities near growing surface. Results better mixing of impurities into melt, decrease in tendency for dendritic growth or cellular growth and crystals with low dislocation density. Applied with success to solution growth and Czochralski growth, resulting in large crystals of superior quality. |
| NASA分類 | FABRICATION TECHNOLOGY |
| レポートNO | 83B10455
NPO-15938 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/408030 |
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