| タイトル | A thermochemical model of radiation damage and annealing applied to GaAs solar cells |
| 著者（英） | Conway, E. J.; Walker, G. H.; Heinbockel, J. H. |
| 著者所属（英） | NASA Langley Research Center|Old Dominion Univ. |
| 発行日 | 1981-01-01 |
| 言語 | eng |
| 内容記述 | Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 82A44935 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/408951 |
|
