| タイトル | Texas Instruments /TI/ 800 x 800 charge-coupled device /CCD/ image sensor |
| 著者（英） | Blouke, M. M.; Hall, J. E.; Cowens, M. W.; Janesick, J. R. |
| 著者所属（英） | Texas Instruments, Inc.; Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1981-01-01 |
| 言語 | eng |
| 内容記述 | Very-large area high-performance CCD image sensors with 800 x 800 pixel format have been successfully fabricated and operated on the basis of a three-level polysilicon gate technology. They are thinned to 8 microns over the entire 12.2 x 12.2 mm active area, and are used in the rear illumination mode. The light transfer characteristic has a gamma value of 1.000 + or - 0.002 over most of the dynamic range. Analysis of the noise behavior shows that the device SNR is shot-noise-limited over most of the dynamic range. Simple on-chip signal processing can be performed using an integration well to noiselessly collect signal charge from multiple pixels prior to reading out the charge. A UV-sensitive phosphor has been applied to the chip, yielding a device capable of imaging at wavelengths from the vacuum UV to the near IR. |
| NASA分類 | INSTRUMENTATION AND PHOTOGRAPHY |
| レポートNO | 82A32579 |
| 権利 | Copyright |
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