| タイトル | Wipe Melt for InP Seed Substrate |
| 著者（英） | Hawrylo, F. Z. |
| 著者所属（英） | NASA Langley Research Center |
| 発行日 | 1983-05-01 |
| 言語 | eng |
| 内容記述 | Seed substrate pulled under InGaAsP wipe melt at temperature of 650 degrees C for approximately 15 to 60 seconds. After pullthrough and meltback, surface has high smoothness and luster without meniscus lines, exaggerated erosion, pits, and pearls characteristic of other wipe melts. Layer-to-substrate interface structure is more planar and of better quality. New combination of elements leaves smooth high luster surface. |
| NASA分類 | FABRICATION TECHNOLOGY |
| レポートNO | 82B10350
LAR-12912 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/414381 |
|
