| タイトル | CLEFT Process for GaAs Solar Cells |
| 著者（英） | Bozler, C. O.; Mcclelland, R. W.; Fan, J. C. C. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1983-05-01 |
| 言語 | eng |
| 内容記述 | CLEFT (cleavage of lateral epitaxial films for transfer) process involves growing ultrathin gallium arsenide (GaAs solar cell on much thicker layer of same material). Growth method is completed solar cell easily separated by cleaving from much thicker substrate. Thick substrate is reusable in making additional cells, which reduces cell material cost. |
| NASA分類 | FABRICATION TECHNOLOGY |
| レポートNO | 82B10349
LEW-13912 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/414382 |
